IEEE Journal of Selected Topics in Quantum Electronics · 1995 · 31 citations · 20 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesOptical Properties Of SemiconductorsPhotonic Device SimulationPhotonic Integrated CircuitsQuantum Well DevicesSemiconductor LasersGain BandwidthGain Versus Bandwidth Trade-offHigh-temperature Device OperationLasersPower OutputQuantum Well GainQuantum Well LasersVertical-cavity Surface-emitting Lasers
Temperature-insensitive characteristics are of great importance in implementing the actual applications of vertical-cavity surface-emitting lasers (VCSEL's) because of the temperature change in the surroundings. To extend the operational temperature range of such lasers, we fabricated a VCSEL with a broad gain bandwidth. The active layers in VCSEL's consist of multiple quantum wells (MQW's) with different bandgap energies. From the change in the threshold current, with temperature as a parameter, we found that the operational temperature range of a VCSEL with a broad gain bandwidth is more than 20/spl deg/C wider than that of conventional VCSEL's, whose active layers consist of a single type of MQW. We demonstrate that the extended-gain bandwidth gives better temperature characteristics. In addition, we simulated the structure of the active layers, and the optimized structure resulted in a 1-mW light output power at less than 5 mA in a single transverse mode oscillation from 20-70/spl deg/C.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Top-surface-emitting GaAs four-quantum-well lasers emitting at 0.85 μm
Y.H. Lee, B. Tell, K. Brown-Goebeler et al. · Electronics Letters · 1990 · 73 citations