The Journal of Physical Chemistry Letters · 2017 · 137 citations · 41 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsNanomaterialsThin FilmsCoatingsConductive MaterialsThin Film Electrical PropertiesThin Film Optical PropertiesThin-film DepositionThin-film MaterialsColloidal SolutionsConductivity In Thin FilmsDip CoatingPlasma TreatmentSheet ResistanceTransparent Conducting FilmsTransparent Conducting MaterialsTransparent Conductive Films
We report a simple and scalable method to fabricate homogeneous transparent conductive thin films (Ti 2 CT x, one of the MXene) by dip coating of an Al 2 O 3 substrate in a colloidal solution of large-area Ti 2 CT x thin flakes. Scanning electron microscopy and atomic force microscopy images exhibit the wafer-scale homogeneous Ti 2 CT x thin film (∼5 nm) covering the whole substrate. The sheet resistance is as low as 70 Ω/sq at 86% transmittance, which corresponds to the high figure of merit (FOM) of 40.7. Furthermore, the thickness of the film is tuned by a SF 6 +Ar plasma treatment, which etches Ti 2 CT x film layer by layer and removes the top oxidized layer without affecting the bottom layer of the Ti 2 CT x flake. The resistivity of plasma-treated Ti 2 CT x film is further decreased to 63 Ω/sq with an improved transmittance of 89% and FOM of 51.3, demonstrating the promise of Ti 2 CT x for future transparent conductive electrode application.
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