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Hyperdimensional computing with 3D VRRAM in-memory kernels: Device-architecture co-design for energy-efficient, error-resilient language recognition
132
Citations
8
References
2016
Year
Unknown Venue
EngineeringMachine LearningMemory DesignEmerging Memory TechnologyError-resilient Language RecognitionOne-shot LearningComputer ArchitectureHardware SystemsSocial SciencesMulti-channel Memory Architecture3D MemoryCompute KernelComputing SystemsMemoryAdaptive MemoryMemory DevicesParallel ComputingVrram In-memory KernelsNeurocomputersCognitive ScienceComputer EngineeringComputer ScienceVirtual MemoryMemory ArchitectureHd ComputingHd ArchitectureDevice-architecture Co-designComputational NeuroscienceParallel ProgrammingBrain-like ComputingIn-memory Computing
The ability to learn from few examples, known as one-shot learning, is a hallmark of human cognition. Hyperdimensional (HD) computing is a brain-inspired computational framework capable of one-shot learning, using random binary vectors with high dimensionality. Device-architecture co-design of HD cognitive computing systems using 3D VRRAM/CMOS is presented for language recognition. Multiplication-addition-permutation (MAP), the central operations of HD computing, are experimentally demonstrated on 4-layer 3D VRRAM/FinFET as non-volatile in-memory MAP kernels. Extensive cycle-to-cycle (up to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> cycles) and wafer-level device-to-device (256 RRAMs) experiments are performed to validate reproducibility and robustness. For 28-nm node, the 3D in-memory architecture reduces total energy consumption by 52.2% with 412 times less area compared with LP digital design (using registers as memory), owing to the energy-efficient VRRAM MAP kernels and dense connectivity. Meanwhile, the system trained with 21 samples texts achieves 90.4% accuracy recognizing 21 European languages on 21,000 test sentences. Hard-error analysis shows the HD architecture is amazingly resilient to RRAM endurance failures, making the use of various types of RRAMs/CBRAMs (1k ~ 10M endurance) feasible.
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