A 130 nm InP HBT integrated circuit technology for THz electronics

Abstract

A 130 nm InP HBT IC technology has been developed capable of circuit demonstrations at > 600 GHz. Transistors demonstrate RF figures-of-merit f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> > 500 GHz and f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> > 1 THz. The HBTs support high current densities > 25 mA/μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> with a common-emitter breakdown voltage BV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ceo</sub> = 3.5 V. The technology includes a multi-level thin-film wiring environment capable of low-loss THz signal routing and high integration density. A large-signal HBT model has been developed capable of accurately predicting circuit performance at THz frequencies. Circuit demonstrations include fundamental oscillators and amplifiers operating at > 600 GHz as well as integrated transmitter and receiver circuits.