BMO-Doped REBCO-Coated Conductors for Uniform In-Field $I_{c}$ by Hot-Wall PLD Process Using IBAD Template

Abstract

BaMO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (BMO, M: Zr or Hf)-doped REBCO-coated conductors were prepared by Hot-Wall PLD method on IBAD template. The highest J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> was obtained for BaHfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> -doped EuBCO. Quite strong pinning force density (F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</sub> ) of 1.6 TN/m <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> was observed at 4.2 K, 15 T, for a sample deposited with growth rate of ~5 nm/s. It had strong c-axis correlated pinning at the temperature above 20 K with the matching field of ~5 T. A 45-m-long sample was formed by productive high growth rate over 20 nm/s, being consistent with commercial nondoped conductors. It had also large I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> of 1687 A/cm and F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</sub> of 0.96 7 TN/m <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> was obtained at 4.2 K, 15 T. The end-to-end longitudinal Ic homogeneity (σ) at 77 K in low field was evaluated to be 2.2% by magnetization. Transport in-fields I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> were also measured for the both end points at 30 K, 2 T, resulting in 1863 and 1883A/cm, respectively.