Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density

Abstract

In this work, we fabricated the In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors (MOSFETs) with a MOS interface of Y2O3/In0.53Ga0.47As and recessed gate structure. We investigated the interfacial properties of the gate stack and the junction characteristics of the fabricated MOSFETs. Low subthreshold slope (SS = 110 mV/dec), high on/off current ratio (Ion/Ioff = 106), and high effective mobility of 1600 cm2/V·s were achieved in the MOSFETs at a sheet charge density (Ns) = 1.2 × 1012 cm−2. From the temperature dependence of I–V characteristics, the interface trap density was extracted to be Dit = 2.2 × 1011 cm−2·eV−1 with a negligible trap-assisted leakage current.