Broadband Phototransistor Based on CH₃NH₃PbI₃ Perovskite and PbSe Quantum Dot Heterojunction

Abstract

Organic lead halide perovskites have received a huge amount of interest since emergence, because of tremendous potential applications in optoelectronic devices. Here field effect phototransistors (FE_pTs) based on CH₃NH₃PbI₃ perovskite/PbSe colloidal quantum dot heterostructure are demonstrated. The high light absorption and optoelectric conversion efficiency, due to the combination of perovskite and quantum dots, maintain the responsivities in a high level, especially at 460 nm up to 1.2 A/W. The phototransistor exhibits bipolar behaviors, and the carrier mobilities are determined to be 0.147 cm²V^-1s^-1 for holes and 0.16 cm²V^-1s^-1 for electrons. The device has a wide spectral response spectrum ranging from 300 to 1500 nm. A short photoresponse time is less than 3 ms due to the assistance of heterojunction on the transfer of photoexcitons. The excellent performances presented in the device especially emphasize the CH₃NH₃PbI₃ perovskite-PbSe quantum dot as a promising material for future photoelectronic applications.