Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiOx capping layer by sputtering and post-annealing - Concepedia

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Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiOx capping layer by sputtering and post-annealing

35

Citations

13

References

2017

Year

Shyh-Jer Huang, Cheng‐Wei Chou, Yan‐Kuin Su, Jyun-Hao Lin, Hsin-Chieh Yu, De-Long Chen, Jian‐Long Ruan

Applied Surface Science

Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied PhysicsAluminum Gallium NitrideGan Power DeviceMicroelectronicsOptoelectronicsCategoryiii-v Semiconductor

References

	Year	Citations

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