Benefits of increased cosmic radiation robustness of SiC semiconductors in large power-converters

Abstract

Cosmic radiation induced single-event-burnout is a known failure mode for power semiconductors. To achieve high reliability the maximum voltage applied to power semiconductors in the application is commonly much less than their nominal voltage rating. Recent measurements of the voltage dependent failure rate of SiC MOSFETs have shown that SiC devices can be operated closer to their nominal voltage than comparable Si components. A case study to identify the failure rates expected in photovoltaic central inverters using different power semiconductors is conducted to investigate possible advantages arising from the increased robustness of SiC devices.