Enhancement of current-perpendicular-to-plane giant magnetoresistance by insertion of amorphous ferromagnetic underlayer in Heusler alloy-based spin-valve structures

Abstract

Abstract We report an improved method for depositing Heusler alloy thin films, which reduces the B2-ordering temperature, and demonstrate its effect on improving spin-polarization and Δ R / R in CPP-GMR sensors. The insertion of a CoFeBTa or CoBTi amorphous ferromagnetic underlayer induced the formation of an amorphous Co 2 (Mn,Fe)Ge Heusler alloy film, reducing the B2-ordering temperature to ∼220 °C, which is significantly lower than the value of 500 °C for an epitaxial system and 400 °C for a polycrystalline system. This novel approach allows the fabrication of spin-valve sensor structures with Δ R / R of 18% after post-deposition annealing at temperatures less than 300 °C and is thus compatible with standard recording read-head sensor production.