A fully integrated 5.3 GHz, 2.4V, 0.3 W SiGe-bipolar power amplifier with 50Ω output

Abstract

A radio frequency power amplifier for 4.8-5.7 GHz has been realized in a 0.25 /spl mu/m SiGe-bipolar technology. The balanced 2-stage push pull power amplifier uses two on chip transformers as input-balun and for interstage matching. Further it uses three coils for the integrated LC-output balun and the rf-choke. Thus the power amplifier is free of any external components. At 1.0V, 1.5V, 2.4V supply voltages output powers of 17.7 dBm, 21.6 dBm, 25dBm are achieved at 5.3 GHz. The respective power added efficiency is 15.6%, 22.4%, 24%. The small-signal gain is 26dB.