Publication | Open Access
The impact of post-deposition annealing on the performance of solution-processed single layer In<sub>2</sub>O<sub>3</sub> and isotype In<sub>2</sub>O<sub>3</sub>/ZnO heterojunction transistors
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Citations
23
References
2016
Year
EngineeringOptoelectronic DevicesSemiconductor DeviceSemiconductorsQuantum MaterialsCharge Carrier TransportCompound SemiconductorMaterials ScienceOxide HeterostructuresElectrical EngineeringSemiconductor TechnologyPhysicsOxide ElectronicsOxide SemiconductorsElectron TransportSemiconductor MaterialSemiconductor Device FabricationMicroelectronicsSingle LayerSolution-processed Single LayerApplied PhysicsCondensed Matter Physics
The influence of annealing temperature on electron transport in single layer In<sub>2</sub>O<sub>3</sub> and isotype In<sub>2</sub>O<sub>3</sub>/ZnO heterojunction channel transistors is investigated.
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