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Electrical and structural characteristics of tin-doped GaN thin films and its hetero-junction diode made all by RF reactive sputtering

Materials EngineeringMaterials ScienceElectrical EngineeringRf Reactive SputteringHetero-junction DiodeStructural CharacteristicsEngineeringRf SemiconductorApplied PhysicsAluminum Gallium NitrideGan Power DeviceThin FilmsMicroelectronicsCategoryiii-v Semiconductor