Publication | Open Access
Advances towards 4J lattice-matched including dilute nitride subcell for terrestrial and space applications
13
Citations
8
References
2016
Year
Unknown Venue
Wide-bandgap SemiconductorEngineeringSpace ApplicationsOptoelectronic DevicesFull 4-JunctionPhotovoltaicsSemiconductorsSolar Cell StructuresCompound SemiconductorRecent AdvancesSemiconductor TechnologyElectrical EngineeringPhysicsSolar PowerOptoelectronic MaterialsAluminum Gallium NitrideCategoryiii-v SemiconductorAdvances Towards 4JApplied PhysicsOptoelectronicsSolar Cell Materials
Recent advances on the development of a 4J lattice-matched dilute nitride solar cell for terrestrial and space applications are described. Modeling of the solar cell is carried out using a drift-diffusion model and material parameters extracted from ad hoc electro-optical characterization resulting in an efficiency prediction of 47% for concentrations of 1000 suns AM1.5d G173 spectrum and 33% for 1× AM0. First experimental solar cell results of a dual-junction GaNAsSb/Ge solar cell and a triple-junction GaInP/Ga(In)As/GaNAsSb components of the full 4-Junction are shown.
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