Publication | Closed Access
Junction Resistivity of Carrier-Selective Polysilicon on Oxide Junctions and Its Impact on Solar Cell Performance
105
Citations
37
References
2016
Year
EngineeringOrganic Solar CellSilicon On InsulatorPhotovoltaicsSemiconductor DeviceSemiconductorsPolo JunctionsSuperconductivityTransfer Length MethodCharge Carrier TransportJunction ResistivityMaterials ScienceElectrical EngineeringOxide JunctionsOxide ElectronicsSemiconductor MaterialElectrical PropertyApplied PhysicsCondensed Matter PhysicsCarrier-selective Polysilicon
We investigate the junction resistivity of high-quality carrier-selective polysilicon on oxide (POLO) junctions with the transfer length method. We demonstrate n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> POLO junctions with a saturation current density J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C,poly</sub> of 6.2 fA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and a junction resistivity ρ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> of 0.6 mΩcm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , counterdoped n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> POLO junctions with 2.7 fA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and 1.3 mΩcm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , and p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> POLO junctions with 6.7 fA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and 0.2 mΩcm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Such low junction resistivities and saturation current densities correspond to excellent selectivities S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sub> of up to 16.2. The efficiency potential for back-junction back-contact solar cells with these POLO junctions was determined to be larger than 25 % by numerical device simulations. We demonstrate experimentally a back-junction back-contact solar cell with p-type and n-type POLO junctions with an independently confirmed efficiency of 24.25 %.
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