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Metal–Semiconductor Phase‐Transition in WSe<sub>2(1‐</sub><i><sub>x</sub></i><sub>)</sub>Te<sub>2</sub><i><sub>x</sub></i> Monolayer

DOIFull Paper Access

148

Citations

30

References

2016

Year

Peng Yu, Junhao Lin, Linfeng Sun, Quang Luan Le, Xuechao Yu, Guanhui Gao, Chuang‐Han Hsu, Di Wu, Tay‐Rong Chang, Qingsheng Zeng,
Advanced Materials

Abstract

A metal-semiconductor phase transition in a ternary transition metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe<sub>2</sub> (WSe<sub>2(1-x)</sub> Te<sub>2x</sub> , where x = 0%-100%). The optical bandgaps of the WSe<sub>2(1-x)</sub> Te<sub>2x</sub> monolayer can be tuned from 1.67 to 1.44 eV (2H semiconductor) and drops to 0 eV (1Td metal), which opens up an exciting opportunity in functional electronic/optoelectronic devices.

References

YearCitations

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