Annealing of deposited SiO_2 thin films: full-atomistic simulation results

Abstract

The previously developed high-performance method of the atomistic simulation of thin film deposition is applied to the investigation of effects connected with SiO2 films annealing. It is found that the film density is reduced for about 0.15 g/cm3 under annealing with the temperature of 1300 K. This corresponds to the reduction of the refractive index for approximately 0.03. Concentrations of the non-bridging and threefold coordinated oxygen atoms are reduced up to four times after annealing. The stress value essentially reduces after annealing at 1300 K and the film thickness increases for 3 nm.