Publication | Open Access
High Open‐Circuit Voltages in Tin‐Rich Low‐Bandgap Perovskite‐Based Planar Heterojunction Photovoltaics
264
Citations
64
References
2016
Year
Low-bandgap CH<sub>3</sub> NH<sub>3</sub> (Pb<sub>x</sub> Sn<sub>1-</sub><sub>x</sub> )I<sub>3</sub> (0 ≤ x ≤ 1) hybrid perovskites (e.g., ≈1.5-1.1 eV) demonstrating high surface coverage and superior optoelectronic properties are fabricated. State-of-the-art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> ) intrinsic carrier mobilities.
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