Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes

Abstract

Semiconducting single-walled carbon nanotubes (s-SWNTs) with diameters of 1.0–1.5 nm (with similar bandgap to crystalline silicon) are highly desired for nanoelectronics. Up to date, the highest reported content of s-SWNTs as-grown is ∼97%, which is still far below the daunting requirements of high-end applications. Herein, we report a feasible and green pathway to use H 2 O vapor to modulate the structure of the intermetallic W 6 Co 7 nanocrystals. By using the resultant W 6 Co 7 nanocatalysts with a high percentage of (1 0 10) planes as structural templates, we realized the direct growth of s-SWNT with the purity of ∼99%, in which ∼97% is (14,4) tubes (diameter 1.29 nm). H 2 O can also act as an environmentally friendly and facile etchant for eliminating metallic SWNTs, and the content of s-SWNTs was further improved to 99.8% and (14,4) tubes to 98.6%. High purity s-SWNTs with even bandgap determined by their uniform structure can be used for the exquisite applications in different fields.