Optoelectronic Properties of Few-Layer MoS₂ FET Gated by Ferroelectric Relaxor Polymer

Abstract

Recently, new devices combining two-dimensional (2D) materials with ferroelectrics, have been a new hotspot for promising applications in electronics and optoelectronics. Here, we design a new type of FET using the 2D MoS₂ and poly(vinylidene fluoride-trifluoroethylene-chlorofloroethylene) terpolymer ferroelectric relaxor. The devices exhibit excellent performance including a large on/off ratio) and an insignificant leakage current. Moreover, the hysteresis characteristics are effectively modulated for its ferroelectric properties at low temperature. Additionally, a broad range photoresponse (visible to 1.55 μm) and a high sensitivity (>300 A/W, λ = 450 nm) are achieved. These results indicate that ferroelectric relaxor can be applied into the high-performance 2D optoelectronic devices.