An examination of bipolar transistor noise modelling and noise physics using microscopic noise simulation

Abstract

This paper examines bipolar transistor noise modelling and noise physics using microscopic noise simulation. Transistor terminal current and voltage noises resulting from velocity fluctuations of electrons and holes in the base, emitter, collector, and substrate are simulated using a new technique, and compared with modelling results. The relevant importance as well as model-simulation discrepancy is analyzed for each physical noise source.