Highly reliable operation at 80°C for 650 nm5 mW AlGaInP LDs

Abstract

Highly reliable operation has been achieved for 650 nm band AlGaInP laser diodes (LDs) at 80°C for the first time. An LD with a multiquantum well active layer grown on a (115)A substrate produced a two-fold gain compared with an LD grown on a vicinal (001) substrate. The threshold current was 40 mA, and the maximum temperature for 5 mW operation was beyond 100°C. The median time before failure for 5 mW operation at 80°C was estimated to be 5,000 h.