High performance 1.28 µm GaInNAs double quantum well lasers

Abstract

The use of multiple quantum wells and GaAs barriers favours the temperature stability and modulation bandwidth of GaInNAs lasers. It is shown that a very low threshold current density and a high characteristic temperature can be achieved for GaInNAs/GaAs double quantum well lasers, emitting at 1.28 µm, when grown by molecular beam epitaxy under favourable conditions.