Publication | Closed Access
Demonstration of 3.5 µm Ga <sub>1-</sub> <i> <sub>x</sub> </i> In <i> <sub>x</sub> </i> Sb/InAssuperlattice diodelaser
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Citations
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References
1995
Year
A demonstration of a semiconductor diode laser based on a type-II Ga1-xInxSb/InAs superlattice active layer is reported. The laser structure uses InAs/AlSb superlattice cladding layers and a multiquantum well active layer with GaInAsSb barriers and Ga1-xInxSb/InAs-superlattice wells. An emission wavelength of 3.47 µm for pulsed operation up to 160 K is observed.
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