Very low threshold current AlGaInp/Ga _x In _1−x P strained single quantum well visible laser diode

Abstract

The successful operation of a separate confinement heterostructure (SCH) AlGalnP/GaxIn1−xP (x = 0.43) strained single quantum well (SSQW) laser has been achieved for the first time. A threshold current of 18 mA at 25°C, the lowest value ever reported for AlGaInP/GaInP lasers, was obtained by a 10 × 200μm index guided laser diode at an emission wavelength of 691 nm.