Room-temperature self-organised In _0.5 Ga _0.5 As quantum dot laser on silicon

Abstract

The first room-temperature operation of In0.5Ga0.5As quantum dot lasers grown directly on Si substrates with a thin (≤2 µm) GaAs buffer layer is reported. The devices are characterised by Jth∼1500 A/cm2, output power >50 mW, and large T0 (244 K) and constant output slope efficiency (≥0.3 W/A) in the temperature range 5–95°C.