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Noble FeRAM technologies with MTP cell structure and BLT ferroelectric capacitors

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2004

Year

Abstract

A 16 Mb 1TIC FeRAM with a novel cell structure has been successfully developed with 0.25 /spl mu/m process technology using (Bi,La)/sub 4/Ti/sub 3/O/sub 12/ (BLT) capacitors for the first time. The developed FeRAM is highly scalable and reliable as a result of applying an MTP (merged top electrode and plate line) structure and BLT stacked capacitor, respectively.