Publication | Open Access

Main properties of Al2O3 thin films deposited by magnetron sputtering of an Al2O3 ceramic target at different radio-frequency power and argon pressure and their passivation effect on p-type c-Si wafers

Materials ScienceMaterials EngineeringAluminium NitrideEngineeringOxide ElectronicsApplied PhysicsMagnetron SputteringAl2o3 Thin FilmsArgon PressureThin FilmsMicroelectronicsThin Film Processing