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ULSI DRAM technology with Ba/sub 0.7/Sr/sub 0.3/TiO/sub 3/ film of 1.3nm equivalent SiO/sub 2/ thickness and 10/sup -9/ A/cm/sup 2/ leakage current
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Citations
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References
1992
Year
Equivalent Sio/sub 2/EngineeringEmerging Memory TechnologyThin Film Process TechnologyPhase Change MemoryBa/sub 0.7/Sr/subSemiconductor DeviceSemiconductorsHigh-dielectric Constant FilmMaterials EngineeringMaterials ScienceElectrical EngineeringHigh-dielectric Constant MaterialUlsi Dram TechnologySemiconductor TechnologyPhysicsSemiconductor MaterialSemiconductor Device FabricationMicroelectronicsUlsi DramsApplied PhysicsSemiconductor MemoryThin Films
A high-dielectric constant material have received increasing attention in view of an application to ULSI DRAMs for keeping a simple cell structure. We demonstrate a new technology with a planar-type single stacked structure utilizing a high-dielectric constant film of Ba/sub 1-x/Sr/sub x/TiO/sub 3/ (BST). The fabricated memory cell capacitor shows a low leakage current of 2*10/sup -9/ A/cm/sup 2/ under an applied voltage of 3.3V and a large capacitance of 32fF/um/sup 2/, which means that the BST film is equivalently as thin as 1.3nm of SiO/sub 2/.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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