A new empirical large signal model for silicon RF LDMOS FETs

Abstract

A new empirical large signal drain current source model, that is single-piece and continuously differentiable, has been developed for silicon LDMOS transistors. The new model is capable of accurately representing the current-voltage characteristics and their derivatives. A single continuously differentiable form models the subthreshold, triode, and saturation regions of operation. The model was implemented in a commercial harmonic balance simulator and parameter extraction software. Measured and simulated load-pull results at a class AB operating point are compared and show very good agreement.