Strained InGaAs quantum disk laser with nanoscaleactive regionfabricated with self-organisation on GaAs (311)B substrate

Abstract

Continuous-wave (CW) operation of a strained InGaAs quantum disk laser with nanoscale active-structures self-organised on GaAs (311)B substrate is demonstrated at room temperature. The threshold current is ~20 mA, which is considerably lower than that of double quantum well lasers on GaAs (100) substrate grown side-by-side.