Generation of single-and double-charge electron traps in tunnel oxide of flash memory cells under Fowler-Nordheim stress

Abstract

The processes of trap generation and electron trapping in tunnel oxide of SuperFlash <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">®</sup> memory cells have been analyzed. It was shown that electrons were mostly trapped by newly generated traps rather than by as-fabricated ones. Due to strongly localized tunneling in SuperFlash cell, it was possible to detect the events of the generation of individual oxide traps. The direct electrical evidence of both single- and double-charge electron trap generation has been observed.