Publication | Closed Access
Effects of Mo back-contact annealing on surface potential and carrier transport in Cu<sub>2</sub>ZnSnS<sub>4</sub> thin film solar cells
20
Citations
52
References
2016
Year
EngineeringThin Film Process TechnologyElectrical PropertiesPhotovoltaicsSemiconductor DeviceSemiconductor NanostructuresSemiconductorsIi-vi SemiconductorSurface PotentialCharge Carrier TransportMaterials ScienceMaterials EngineeringElectrical EngineeringSemiconductor TechnologyOxide ElectronicsCarrier TransportSemiconductor MaterialBetter Device PerformanceApplied PhysicsMo Back-contact AnnealingCzts AbsorberThin FilmsSolar Cell Materials
Mo annealing temperature of 500 °C enhances the electrical properties of CZTS absorber, leading to better device performance.
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