Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method - Concepedia

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Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method

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References

2006

Year

Jaehyoung Koo, Seokhoon Kim, Sangmin Jeon, Hyeongtag Jeon, Young Do Kim, Youngdo Won

Journal of the Korean Physical Society

Materials ScienceAluminium NitrideEngineeringSurface ScienceApplied PhysicsTrimethylaluminum PrecursorsThin FilmsChemical DepositionChemical Vapor DepositionThin Film Processing

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