New LV-BPD (low voltage buried photo-diode) for CMOS imager

Abstract

We have developed a low voltage buried photodiode for CMOS imager, in order to achieve high quality reproduced images comparable to CCD imager. The new buried photodiode has been operated in complete charge transfer mode at low voltage of 33 V, and the image lag and kTC noise of the photodiode have been suppressed.