Effect of Seed Arrangements on the Quality of n-Type Monolike Silicon Grown by Directional Solidification

Abstract

The effect of seed arrangements on the ingot quality was studied for the n-type monolike silicon grown by G1-scale directional solidification. It was found that the subgrains and defects were generated easily from the 0° tilt angle between seed plates. In constrast, the seed junction with large tilt angles had little effect on the defect generation, and the best tilt angle ranged from 10° to 30°. Except the area near the 0° tilt angle, the best lifetime of the wafer after gettering could be greater than 3 ms. Color mismatch on the appearance of the solar cell made from the wafers due to seed arrangements could be an issue in practice.