GaInP/AlGaInP double-heterostructure laser grown on a (111)B-oriented GaAs substrate by metalorganic chemical vapour deposition

Abstract

Room temperature continuous-wave operation of a Ga0.5In0.5P/(Al0.5Ga0.5)0.5In0.5P double-heterostructure laser grown on a (111)B-oriented GaAs substrate by metalorganic chemical vapour deposition was obtained for the first time. The threshold current was 99 mA. The emission wavelength was around 650 nm, which was about 30 nm shorter than that of a similar laser grown on a (100)-oriented GaAs substrate.