2002 · 26 citations · 4 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyField-effect TransistorsHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsMicrowave Integrated CircuitsEnhancement-mode TransistorsField-effect Transistor Transfer CharacteristicsHigh-speed Circuit DesignInsulated-gate Field-effect TransistorsMicrowave Transistors
High-speed, low-power consumption field-effect transistors fabricated from InSb/In/sub 1-x/Al/sub x/Sb are demonstrated. A 0.7 /spl mu/m gate-length enhancement-mode device shows an f/sub T/, of 74 GHz, and an f/sub max/ of 89 GHz, at a drain voltage below 0.5 V. This is the fastest reported transistor for its gate length, as far as is known.
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Nonequilibrium devices for infra-red detection
T. Ashley, C.T. Elliott · Electronics Letters · 1985 · 197 citations
Uncooled high-speed InSb field-effect transistors
T. Ashley, A. B. Dean, C.T. Elliott et al. · Applied Physics Letters · 1995 · 107 citations