Transparent Indium Tin Oxide Electrodes on Muscovite Mica for High-Temperature-Processed Flexible Optoelectronic Devices

Abstract

Sn-doped In₂O₃ (ITO) electrodes were deposited on transparent and flexible muscovite mica. The use of mica substrate makes a high-temperature annealing process (up to 500 °C) possible. ITO/mica retains its low electric resistivity even after continuous bending of 1000 times on account of the unique layered structure of mica. When used as a transparent flexible heater, ITO/mica shows an extremely fast ramping (<15 s) up to a high temperature of over 438 °C. When used as a transparent electrode, ITO/mica permits a high-temperature annealing (450 °C) approach to fabricate flexible perovskite solar cells (PSCs) with high efficiency.