Publication | Closed Access
Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
24
Citations
44
References
2016
Year
Materials ScienceOptimised ConditionsHafnium Oxide FilmsPlasma ElectronicsEngineeringSurface ScienceApplied PhysicsSemiconductor Device FabricationVacuum DeviceThin FilmsSilicon Surface PassivationMicroelectronicsAtomic LayerPlasma ProcessingChemical Vapor DepositionSilicon On InsulatorThin Film Processing
Plasma assisted ALD deposited hafnium oxide films are studied for silicon surface passivation. SRV < 40 cm s<sup>−1</sup> are realized under optimised conditions.
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