Si CMOS platform for quantum information processing

Abstract

We report the first quantum bit (qubit) device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a hole Quantum Dot (QD) defined by one of the Gates. Coherent spin manipulation is performed by means of an RF E-Field signal applied to the Gate itself. By demonstrating qubit functionality in a conventional transistor-like layout and process flow, this result bears relevance for the future up-scaling of qubit architectures, including the opportunity of their co-integration with “classical” Si CMOS control circuitry.