Back-illuminated voltage-domain global shutter CMOS image sensor with 3.75µm pixels and dual in-pixel storage nodes - Concepedia

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Back-illuminated voltage-domain global shutter CMOS image sensor with 3.75µm pixels and dual in-pixel storage nodes

13

Citations

0

References

2016

Year

Laurence Stark, Jeffrey M. Raynor, F. Lalanne, Robert K. Henderson

Unknown Venue

Photoelectric SensorEngineeringMaximum Dynamic RangeElectronic ImagingImage ProcessorComputer EngineeringRadiation ImagingComputational Imaging-80Db PlsComputational PhotographyInstrumentationImage ResolutionMicroelectronicsImage Sensor

Abstract

A 1024×800 image sensor with voltage-domain global shutter pixels and dual in-pixel storage is implemented in a 90nm/65nm back-illuminated (BSI) imaging process. The pixel has a 3.75μm pitch, achieves -80dB PLS operating in its correlated double sampling mode and has a maximum dynamic range in its high-dynamic range imaging mode of 102dB.