Relationship of Open-Circuit Voltage to CdTe Hole Concentration and Lifetime

Abstract

We investigate the correlation of bulk CdTe and CdZnTe material properties with experimental open-circuit voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> ) through fabrication and characterization of diverse single-crystal solar cells with different dopants. Several distinct crystal types reach V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> > 900 mV. Correlations are in general agreement with V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> limits modeled from bulk minority-carrier lifetime and hole concentration.