Gate‐Tunable Hole and Electron Carrier Transport in Atomically Thin Dual‐Channel WSe₂/MoS₂ Heterostructure for Ambipolar Field‐Effect Transistors

Abstract

An ambipolar dual-channel field-effect transistor (FET) with a WSe₂ /MoS₂ heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS₂ and WSe₂ , respectively. Moreover, the photoresponse is studied at the heterointerface of the WSe₂ /MoS₂ dual-channel FET.