A Triple-Band Voltage-Controlled Oscillator Using Two Shunt Right-Handed 4^th-Order Resonators

Abstract

A triple-band (TB) oscillator was implemented in the TSMC 0.18 ㎛ 1P6M CMOS process, and it uses a cross-coupled nMOS pair and two shunt 4SUPth/SUP order LC resonators to form a 6SUPth/SUP order resonator with three resonant frequencies. The oscillator uses the varactors for band switching and frequency tuning. The core current and power consumption of the high (middle, low)- band core oscillator are 3.59(3.42, 3.4) ㎃ and 2.4(2.29, 2.28) ㎽, respectively at the dc drain-source bias of 0.67V. The oscillator can generate differential signals in the frequency range of 8.04-8.68 ㎓, 5.82-6.15 ㎓, and 3.68-4.08 ㎓. The die area of the triple-band oscillator is 0.835 × 1.103 ㎟.