Multibit MoS₂ Photoelectronic Memory with Ultrahigh Sensitivity

Abstract

A novel multibit MoS₂ photoelectronic nonvolatile memory device is developed by synergistically combining rational device designs and the efficient transfer of large-area MoS₂ flakes. The MoS₂ photoelectronic memory exhibits excellent memory characteristics, including a large programming/erasing current ratio that exceeds 10⁷ , multilevel data storage of 3 bits (corresponding to eight levels), performance stability over 200 cycles, and stable data retention over 10⁴ s.