Solution‐Processed Organic–Inorganic Perovskite Field‐Effect Transistors with High Hole Mobilities

Abstract

A very high hole mobility of 15 cm² V^-1 s^-1 along with negligible hysteresis are demonstrated in transistors with an organic-inorganic perovskite semiconductor. This high mobility results from the well-developed perovskite crystallites, improved conversion to perovskite, reduced hole trap density, and improved hole injection by employing a top-contact/top-gate structure with surface treatment and MoO_x hole-injection layers.