Atomic-Monolayer MoS₂Band-to-Band Tunneling Field-Effect Transistor

Abstract

The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS₂ as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS₂ , results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.