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Remarkable charge-trapping performance based in Zr 0.5 Hf 0.5 O 2 with nanocrystal Ba 0.6 Sr 0.4 TiO 3 blocking layer for nonvolatile memory device

Materials ScienceRemarkable Charge-trapping PerformanceNon-volatile MemoryEngineeringNanoelectronicsApplied PhysicsCondensed Matter PhysicsMemory DeviceSemiconductor MemoryNonvolatile Memory DeviceZr 0.5