High efficiency GaN HEMT synchronous rectifier with an octave bandwidth for wireless power applications

Abstract

This paper presents the design and implementation of a high efficiency and high power wideband GaN RF synchronous rectifier. The rectifier circuit is constructed from a wideband amplifier using the time reversal duality principle. Measurement results are presented for both the amplifier and rectifier. Under identical source power conditions the amplifier has a power efficiency of 79.2% and the rectifier has a power efficiency of 80.1% with a DC power about 8 W. Power efficiency is also measured over a broad bandwidth and remains above 60% over a frequency range from 600 MHz to 1150 MHz.